Selected Recent Publications of The Group

International Journal Articles

Y. Arslan, F. Oguz and C. Besikci, "Extended Short Wavelenght Infrared In0.83Ga0.17AS Focal Plane Array" IEEE Journal of Quantum Electronics, vol. 50, pp. 957-964, 2014.

Y. Arslan, T. Colakoglu and C. Besikci, "Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array," IEEE Journal of Quantum Electronics, vol. 49, pp. 186-195, 2013.

Y. Arslan, T. Çolakoglu, G. Torunoğlu, O. Aktas and C. Besikci, "Enhanced Performance QWIP FPAs,"Infrared Physics and Technology, 2013.

H. Koçer, Y. Arslan, C. Besikci, "Numerical Analysis of Long Wavelength Infrared HgCdTe Photodiodes,"Infrared Physics and Technology, vol. 55, pp. 49-55, 2012.

S. U. Eker, Y. Arslan, C. Besikci, "High Speed QWIP FPAs on InP Substrates", Infrared Physics and Technology, vol. 54, pp. 209-214, 2011.

S. U. Eker, Y. Arslan, A.E. Onuk and C. Besikci, “High Conversion Efficiency InP/InGaAs Strained
Quantum Well Infrared Photodetector Focal Plane Array With 9.7 µm Cut-Off for High-Speed Thermal Imaging”, IEEE Journal of Quantum Electronics, vol 46, pp.164-168, 2010

S. U. Eker, Y. Arslan, M. Kaldirim and C. Besikci, “QWIP FPAs on InP Substrates for Single and Dual Band Thermal Imagers”, Infrared Physics and Technology, vol 52, pp.385-390, 2009

Y. Arslan, S. U. Eker, M. Kaldirim and C. Besikci, “Large Format Voltage Tunable Dual-Band QWIP FPAs”, Infrared Physics and Technology , vol 52, pp.399-402, 2009

S.U. Eker, M. Kaldırım, Y.Arslan and C. Besikci, "Large Format Voltage Tunable Dual-Band Quantum-Well Infrared Photodetector Focal Plane Array For Third Generation Thermal Imagers", IEEE Electron Device Letters, vol. 29, pp. 1121-1123, 2008

M. Kaldırım, Y. Arslan, S. U. Eker and C. Besikci, “Lattice Matched AlInAs-InGaAs Mid-wavelength QWIPs: Characteristics and Focal Plane Array Performance, Semiconductor Science and Technology, vol. 23, 085007, 2008.

M. Kaldırım, S. U. Eker, Y. Arslan, U. Tumkaya and C. Besikci, “Large Format Voltage Tunable Dual Color Midwavelength Infrared Quantum Well Infrared Photodetector Focal Plane Array”, IEEE Photonics Technology Letters, vol. 20, pp.709-711, 2008.

S. Ozer, U. Tumkaya and C. Besikci, "Large Format AlInAs-InGaAs Quantum Well Infrared Photodetector Focal Plane Array for Midwavelength Infrared Thermal Imaging", IEEE Photonics Technology Letters , vol. 19, pp. 1371-1373, 2007.

S. Ozer, U. Tumkaya, B.Asici and C. Besikci, "Demonstration and Performance Assessment of Large format InP-InGaAsP Quantum Well Infrared Photodetector Focal Plane Array", IEEE Journal of Quantum Electronics , vol. 43, pp. 709-713, 2007.

S. Memiş, O. O. Cellek, U. Bostanci, M. Tomak, C. Beşikci, "A detailed ensemble Monte Carlo study of the effect of quantum well width on quantum well infrared photodetector characteristics",Turkish Journal of Physics, 30 (4), pp. 335-344, 2006.

O. O. Cellek, S. Ozer, and C. Besikci, "High Responsivity InP/InGaAs Quantum Well Infrared Photodetectors: Characteristics and Focal Plane Array Performance", IEEE Journal of Quantum Electronics , vol. 41, pp. 980-985, 2005.

S. Ozer, O.O. Cellek, and C. Besikci, "Assessment of Large Format InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array",Infrared Physics and Technology , vol.47, pp. 115-118, 2005.

O. O. Cellek, S. Memis, U. Bostanci, S. Ozer and C. Besikci,'Gain and Transient Photoresponse of Quantum Well Infrared Photodetectors: A Detailed Ensemble Monte Carlo Study', Physica E:Low Dimensional Systems and Nanostructures, vol. 24, pp. 318-327, 2004.

O. O. Cellek and C. Besikci,'Detailed Investigation of Electron Transport, Capture and Gain in Al 0.3 Ga 0.7 As/GaAs Quantum Well Infrared Photodetectors', Semiconductor Science and Technology ,vol. 19, pp.183-190, 2004.

S. Ozer and C.Besikci, 'Assessment of InSb Photodetectors on Si Substrates', Journal of Physics D-Applied Physics ,vol. 31, pp. 2211-2218,1998. vol. 36, pp. 559-563, 2003.

C. Besikci, S. Ozer, Chris Van Hoof, J. John, L, Zimmerman, P. Merken,"Characteristics of InAs0.8Sb0.2 Photodetectors on GaAs Substrates", Semiconductor Science and Technology , vol. 16, pp. 992-996, 2001.

C.Besikci,A. T. Bakir and B. Tanatar,"Dielectric Screening Effects on Electron Transport in GaInP/InGaAs/GaAs Quantum Wells", Journal of Applied Physics , vol. 88, pp. 1504-1511, 2000.

C. Besikci,Y.Civan,"Characteristics of electron traps in Si-doped GaInP and electrical
properties of modulation doped GaInP/InGaAs/GaAs heterostructures", Thin Solid Films ,
vol.338, pp. 213-219, 1999.

C.Besikci,Y.Civan,"Feasibility of the GaInP/InGaAs/GaAs Material System for
Modulation Doped Field Effect Transistors", Turkish Journal of Physics , vol. 23, pp. 619-629, 1999.

O. Sen, C. Besikci, B. Tanatar, 'Effects of Screening on the Two-Dimensional Electron
Transport Properties in Modulation Doped Heterostructures', Solid-State Electronics ,
vol.42, pp. 987-991, 1998.

A. Tevke, C. Besikci, C. Van Hoof, G. Borghs, 'InSb Infrared p-i-n Photodetectors Grown
on GaAs Coated Si Substrates by Molecular Beam Epitaxy', Solid-State Electronics ,
vol.42, pp. 1039-1044, 1998.

C. Besikci, B. Tanatar,O. Sen, 'Hydrodynamic Approach for Modeling Transport in
Quantum Well Device Structures' ,Journal of Physics D-Applied Physics ,
vol. 31, pp. 2211-2218,1998.

C. Besikci, Y. Civan, S. Ozder, O. Sen, C. Jelen, S. Slivken, M. Razeghi, 'Gas Source
Molecular Beam Epitaxy Growth and Characterization of GaInP/InGaAs/GaAs Modulation
Doped Field Effect Transistor Structures', Semiconductor Science and Technology , vol.12, pp. 1472-1478, 1997.