2005

1. Selective excitation and depth profiling of light emitting centers in Si implanted SiO₂, Journal of Luminescence, (in press).

2. The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO₂ U.V. Desnica, P. Dubcek, K. Salamon, I.D. Desnica-Frankovic, M. Buljan, S. Bernstorff, U. Serincan, R. Turan, Nuclear Instruments and Methods in Physics Research B, (in press).

3. Can chemically-etched Ge or Ge nanocrystals emit visible PL?, G. Kartopu, S. C. Bayliss, U. Serincan, R. Turan, R. E. Hummel, Y. Ekinci, A. E. Gunnæs and T. G. Finstad, Physica Status Solidi (in press)

4. Reflectance spectra and refractive index of a Nd:YAG laser-oxidized Si surface, G. Aygun, E. Atanassova, R. Turan, Tz. Babeva, Materials Chemistry and Physics 89, 316-320, 2005.

2004

5. Electrical and magnetic properties of Si on implanted YBa2Cu307-delta thin films and microbridges, I. Avci, M.Tepe, U. Serincan, B. Oktem, R. Turan, D. Abukay, Thin Solid Films 466 (1-2):37-40 NOV 1 2004.

6. Photoluminescence spectroscopy in the study of growth of CdSxSe1-x nanocrystals in glass, C. Allahverdi,  MH. Yukselici, R.Turan, A. Seyhan, Semiconductor Science and Technology 19 (8): 1005-1009 AUG 2004.

7. Oxidation of Si surface by a pulsed Nd: YAG laser, G. Aygun , E. Atanassova, A. Alacakir , Journal of Physics D-Applied Physics 37 (11):1569-1575 JUN 7 2004.

8. Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS, B. Belin, P. Bode , R. Turan, Th. G. Van Meerten, Journal of Radioanalytical and Nuclear  Chemistry 261 (2):479-483 2004.

9. Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors, B. Aslan, R. Turan, H.C. Liu, J. M. Baribeau, Semicond. Sci. Technol. 19 (3): 399-403 MAR (2004).

10. Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors, B. Aslan, R. Turan, H.C. Liu,  J. M. Baribeau, M. Buchanan, and P. Chow-Chong, Appl. Phys. B-Lasers and Optics 78 (2): 225-228 JAN (2004)

11. Characterization of Ge nanocrystals embedded in SiO₂ by Raman Spectroscopy,

 U. Serincan, G. Kartopu, A. Guennes, T. G. Finstad, R. Turan, Y. Ekinci and S.C.Bayliss, Semiconductor Science and Technology 19 (2):247-251 FEB 2004.

12. Introduction of Si/SiO2 interface states by annealing Ge implanted films E. S. Marstein, A. E. Gunnaes, Olsen A., T. G. Finstad, R. Turan,  and U. Serincan, Submitted to Journal of Applied Physics 96 (8):4308-4312 OCT 15 2004.

2003

13. Annealing effect on electrical and photoconductive properties of  Si implanted GaSe single crystal, O. Karabulut, M. Parlak, K. Yilmaz, R. Turan, and B. G. Akınoğlu, Crystal Research Technology, 38 (12):1071-1076 (2003).

14. Electrical Properties of Nitrogen Implanted GaSe Single Crystal, O. Karabulut*, M. Parlak, R. Turan, U. Serincan, E. Taşarkuyu and B. G. Akınoğlu, Crystal Research and Technology, 38 (9): 811-816 (2003).

15. Ultrathin Oxynitridation Process through ion implantation in a poly-Si1-xGex gate MOS capacitor, A. P. Jacob, T. Myrberg, O. Nur, M. Friesel, M. Willander, U. Serincan and R. Turan, Materials Science in Semiconductor Processing 6, 37(2003).

16. “Mechanisms of void formation in Ge implanted SiO2”, E. S. Marstein, A. E. Gunnaes, U. Serincan, S. Jorgensen, A. Olsen, R. Turan, and T. G. Finstad, Nuclear Instruments and Methods in Physics Research B , 207, 424–433, 2003

17. On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium, G. Kartopu., SC Bayliss, VA Karavanskii, Rj Curry, R.Turan, AV Sapelkin, Journal of Luminescence 101 (4): 275-283 APR 2003.

2002

18. Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films, , Surface and Coatings Technology, 158-159, 544 (2002), E. S. Marstein, A. E. Gunnæs, U. Serincan, R. Turan, A. Olsen and T. G. Finstad

19. “On the internal photoemission spectrum of PtSi/p-Si infrared detectors”, B. Aslan, R. Turan, Infrared Physics and Technology, 43, 85 (2002).

2001

20. Comparison between the noise properties of PtSi/p-Si1-xGex Schottky contacts prepared by co-sputtering and thermal reaction, H. Ouacha, O Nur, Y. Fu,  M. Willander, A. Ouacha, R.Turan,  Semicond Sci. Tech. 16 (4): 255-259 (2001)  ,

21. “Observation of strain relaxation in Si1-xGex layers by optical and electrical characterization of schottky junction”, B. Aslan, R. Turan,  O. Nur, M. Karlsteen, M. Willander, Applied Physics A, A 72, 587 (2001)

2000 and before

22. “Effect of layer relaxation on the internal photoemission in Pt/SiGe Schottky barrier type infrared detectors “,  B.Aslan,  R. Turan,  O. Nur, M. Karlsteen, M. Willander, , Mat. Res. Soc. Symp. Proc. 607, 235 (2000).

23. “Electrical transport at a non-ideal CrSi₂/Si junction”, O.S. Aniltürk, and R. Turan, Solid State Electronics, 44, 41(2000).

24. "Temperature dependence of a CrSi₂ Schottky barrier on n-type and p-type Si” Schottky barrier", O.S. Aniltürk, and R. Turan, Semiconductor Science and Technology, 19, 1060(1999).

25. Quantitative imaging of semiconductor doping distributions using a scanning electron microscope. D.D. Perovic, R. Turan and M.R. Castell., In "The Electron", p. 258 - 265 (1998), Proceeding of the International Centennial Symposium on the Electron, Cambridge 1997. IOM Communications Ltd, London, U.K., Book 687, edited by A. Kirkland and P.D. Brown.

26. “Correlation between barrier height and the band offsets in

metal/ Si1-xGex/Si heterostructures”, O. Nur, M. Karlsteen, M. Willander, R. Turan, B. Aslan, M. O. Tanner, K. L. Wang, Applied Physics Letters, 73 (26), 3920(1998).

27. "Mapping electrically active dopants profiles by field-emission scanning electron microscopy", R. Turan, D.D. Perovic, and D.C. Houghton, Applied Physics Letters, 69(11), 1593(1996).

28. "Low schottky barrier junctions on strained Si1-xGex for infrared dedectors", R. Turan, O. Nur, M. Willander, M. R. Sardela, and G. V. Hansson, Physica Scripta, T 69, 250(1997).

29."Electrical and structural characterization of PtSi/p-Si1-xGex Low schottky barrier junctions prepared by co-sputtering", O. Nur, M. Willander, R. Turan, M. R. Sardela, and G. V. Hansson,  J. Vac. Sci. Technol., 15, 241 (1997).

30. "Fabrication and characterization of MOS capacitors Fabricated on 3C-SiC films grown on Si(111) substrates by reactive magnetron sputtering", Q. Wahab,  R. Turan, L. Hultman, M.  Willander and J. -E. Sundgren,  Thin  Solid Films, 287, 252 (1996).

31. "Metal Semiconductor Junctions on p-type Strained Si1-xGex  Layers",  O. Nur, M. Willander, R. Turan, M. R. Sardela, and G. V. Hansson,  Applied Physics Letters, 68 (8), 1084(1996).

32. "Schottky barrier heigth of Ir/p-Si and Ir/strained p-Si1-xGex junctions", O. Nur, M. R. Sardela,  M. Willander, and R. Turan,  Semicond. Sci. and Technol., 10, 551(1995).

33. "Strain determination and microstructural characterization of 50 keV Sn-ion-implanted Si(001), M. R. Sardela, Jr., R. Turan, M. Willander, G. V. Hansson, and L. Hultman, J. Appl. Phys. 77, 1411(1995).

34. "Properties of MOS structure fabricated on 3C-SiC grown by reactive magnetron sputtering", R. Turan, Q. Wahab, L. Hultman, M.  Willander and J. -E. Sundgren, Mat. Res. Soc. Symp. Proc. 339, 157 (1994).

35. "Schottky barrier height of Si-SiCr2 Junction", R. Turan and N. Akman, Semicond. Sci. and Technol., 8, 1999(1993).

36. "Electrical properties of Ge-implanted and oxidized Si", R. Turan and T. G. Finstad, Semicond. Sci. and Technol., 7, 75(1992).

37. "Dopant redistribution during annealing of amorphized <111>Si", R. Turan and T.G. Finstad, Philos. Mag. 63, 519(1991).

38. "Structural and electrical properties of B- and Ge- implanted Si", R.Turan, B. Hugsted, O.M. Lønsjø and T.G. Finstad, J. Appl. Phys., 66, 1155(1989).

39. "The effect of electron-phonon interaction and a strong magnetic field on the ground state binding energy of a hydrogenic impurity in GaAs-GaAlAs  quantum well structures", A. Erçelebi and R.Turan, J. Phys. and Chem. Solids 47, 689(1986).

40."Ge+B implantations in Si" : Ge Diffusion and carrier transport", R.Turan, O.M. Lønsjø and T.G. Finstad, Proceedings of 13th Nordic Semiconductor Meeting, Sweden, 1988, p.219

41. "The poor man superlattice: V-Si layered structures", G.Salomonsen, R.Turan, L.Evensen and T.G.Finstad, Proceedings of 13th Nordic Semiconductor Meeting, Sweden, 1988, p.277.

42. "Oxidation of Ge-implanted Si; electrical properties, R. Turan and T. G. Finstad, Proceedings of 14th Nordic Semiconductor Meeting, Denmark, 1990, p.277.

43. "Boron Doped LPCVD polysilicon : reversible variations of resistance during low temperature cycling", L. Evensen, B. S. Avset, R. Turan, T. G. Finstad, Proceedings of 14th Nordic Semiconductor Meeting, Denmark, 1990, p.179.

44. “Internal photoemission spectroscopy for a PtSi/p-Si Scottky junction”, B. Aslan and R. Turan, Proceeding of international School of Solid State Physics, Baskıda.

45. "Research on Device Physics and Technology at the Middle East Technical University", R. Turan and B. Katircioglu, Proceedings of ICM'94, The 6th International Conference on Microelectronics, Istanbul, Sept. 5-7, 1994.

46. “Properties of MOS capacitors produced on SiGe formed by Ge-implanted Si”, M. Şahin, S. Özder, R. Turan,  International Conference on Ion Beam Analysis, Dresden, July 26-30, 1999

47. " Electrical properties of Pt-Si1-xGex and PtSi-Si1-xGex junctions",

R. Turan, O. Nur, M. Willander, G. V. Hansson and B. Andersson, Proceeding of 16th Nordic Semiconductor Meeting, Laugarvatn, Iceland, 1994, p.179.

48. "FE-SEM Imaging of semiconductor quantum wells and doping disributions", R. Turan, I. Koutzarov, and D. D. Perovic,  Proceeding of Scanning Microscopy 1996 Meeting, May 11-16, 1996, Wahington DC, USA.

49. "The effect of electron phonon coupling on the ground state of hydrogenic donors in GaAs-GaAlAs superlatices", R.Turan and A.Ercelebi, Turkish Journal of Physics A9, 133(1985).

50. “Internal potoemission spectroscopy for a PtSi/p-Si Schottky junction”, B. Aslan and R. Turan, Turkish Journal of Physics, 24, 577 (2000).

51. Properties of MOS Capacitors Produced on SiGe formed by Ge-implanted Si, M. Sahin, S. Özder, R. Turan, Turkish Journal of Physics 25, 43(2001).

52. "An improved technique for quasi-static C-V measurements"., R. Turan and T. G. Finstad, Report series,  Department of Physics, University of Oslo, Norway (1990).

53. "Non-equilibrium diffusion of dopants in silicon: Numerical solutions of the diffusion equation, application to redistribution of ion implanted dopants in <111> recrystallized Si", R. Turan, Report series, Department of Physics, University of Oslo, Norway (1990).