2000-2001 Academic Year - Spring Semester
Section 01
Instructor: Murat Eyüboglu
Office: DZ-03
Credit Hours: (3-0) 3
Catalogue Description: Basic semiconductor
concepts. Conduction mechanisms in semiconductors and
physical electronics. Physics of p-n junction
diodes, bipolar junction transistors (BJTs) and field-effect
transistors (FETs). Modes of operation and
characteristics. Transistor biasing and small-signal models
for BJTs and FETs. Secondary effects in
transistors. Dynamic models for diodes and transistors.
Modeling concepts for computer-aided design.
Textbook:
1 ) Microlectronic Circuit Design,
Richard C. Jaeger, Mc Graw Hill, 1997
2) Solid-State Electronic Devices, B. G.
Streetman, Prentice Hall, 4th Edition, 1995.
Grading policy:
| 2 Midterm Exams | 25% each |
| Final Exam | 35% |
| Quiz | 10% |
| Perf. in class / Atten. | 5% |
This course is prerequisite for EE
311, EE 312, EE 313, EE 314 and EE 463, and it is likely
that the course will not be offered
in the Summer School. Therefore, if you fail, you will
not be able to take at least four courses
next year. If you follow the instructions given below,
there will be no reason for failure:
Attend the lectures. There is a very
strong correlation between the attendance rates and
course grades of the students. The course
topics are strongly related to each other. If you
must miss a lecture in the case of an emergency
or sickness, make sure you read the covered
topic in the text before you come to class
for the following lecture. An attendance list will
be filled at every lecture. A 50% attendance
will get zero credit.
Attendance between 50% -100% will affect
your class performance, linearly.
Do not wait until the exam day, study
regularly and read the material in the text before it is
covered in the lectures.
Homework questions will be selected
from the previous years’ exam questions and will be
delivered at the beginning of the semester.
Please note that homeworks will not be collected
and evaluated. However, quiz questions will
be selected from the same homework questions and
they will be evaluated.
Attend the recitations.
Participate in the class discussions.
COURSE SYLLABUS:
R1: Microlectronic Circuit Design, Richard
C. Jaeger, Mc Graw Hill, 1997
R2: Solid State Electronic Devices, B.G.
Streetman, 4. Edition, Prentice Hall, 1995.
Topic
| Topic | TEXTBOOK
Section(s) |
WEEK |
| Introduction to Solid-State Electronics | 1.1-1.7 (R1) | 1 |
| Solid-State Electronic Materials | 2.1 (R1) | 1 |
| Drift Currents in Semiconductors | 2.2 (R1) | 1 |
| Covalent Bond and Energy Bands | 2.3 (R1), 3.1.2, 3.1.3 (R2) | 1 |
| Mobility and Resistivity | 2.4, 2.5 (R1) | 2 |
| Impurities in Semiconductors | 2.6 (R1) | 2 |
| Electron and Hole Concentrations | 2.7 (R1) | 2 |
| Energy Band Model and Fermi Level | 2.8 (R1), 3.3.1 (R2) | 2 |
| Recombination of Electron and Holes | 4.3.1 (R2) | 2-3 |
| Mobility and Resistivity in Doped Semiconductors | 2.9 (R1) | 3 |
| Diffusion Currents | 2.10, 2.11 (R1) | 3 |
| Continuity and Diffusion Equations | 4.4.3, 4.4.4 (R2) | 3 |
| The p-n junction Diode | 3.1 (R1), 5.3.1 (R2) | 3-4 |
| i-v Characteristics of the Diode | 3.2 (R1) | 4 |
| Diode Equation | 3.3 (R1) | 4 |
| Diode Characteristics | 3.4 (R1) | 4 |
| Diode Temperature Coeeficient | 3.5 (R1) | 4 |
| Diode Breakdown | 3.6 (R1) | 5 |
| p-n junction capacitance | 3.7 (R1) | 5 |
| Diode Circuit Analysis | 3.9 (R1) R.A. | 5 |
| Multiple Diode Circuits | 3.10 (R1) R.A. | 5 |
| Zener Diode Circuits | 3.11 (R1) R.A. | 5 |
| Dynamic Switching Behavior of Diode | 3.18 (R1) | 5 |
| Photodiodes, Solar Cells, LEDs | 3.19 (R1) R.A. | 5 |
| Characteristics of the MOS Capacitor | 4.1 (R1) | 5 |
| NMOS Transistor | 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8 (R1) | 6 |
| PMOS Transistor | 4.9, 4.10 (R1) | 6 |
| Biasing the MOSFET | 4.11 (R1) | 7 |
| Capacitances in MOS Transistors | 4.12 (R1) R.A. | 7 |
| JFET | 4.13 (R1) | 7-8 |
| Bipolar Junction Transistor | 5.1, 5.2, 5.3 (R1),
7.1.2, 7.2.1, 7.2.2 (R2) |
8-9 |
| BJT Equivalent Circuits | 5.4 (R1) | 9 |
| Operation Regions and the i-v Characteristics of the BJT | 5.5, 5.6 (R1) | 10 |
| Minority Carrier Transport in the Base | 5.7 (R1) | 10 |
| Simplified Model for Active Region | 5.9 (R1) | 10 |
| Early Effect in BJT | 5.12 (R1) | 11 |
| Biasing the BJT | 5.13 (R1) | 11 |
| Transistor as an Amplifier | 13.1, 13.2 (R1) | 11 |
| Circuit Analysis Using DC and AC Equivalent Circuits | 13.3 (R1) | 12 |
| Small-signal Model for the Diode | 13.4 (R1) | 12 |
| Small-signal Model for the BJT | 13.5 (R1) | 12 |
| Common Emitter Amplifier | 13.6 (R1) | 12-13 |
| Small-signal Models for the FETs | 13.7, 13.8 (R1) | 13 |
| Common-source Amplifier | 13.9 (R1) | 13 |